封装/外壳：TO-220-3 包装：管件 描述：MOSFET N-CH 150V 24A TO220AB 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤95mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

HEXFET Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤95mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

High frequency DC-DC converters

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

HEXFET짰Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current • Lead-Free Applications • High frequency DC-DC converters