型号 功能描述 生产厂家&企业 LOGO 操作
IXTP180N085T

TrenchMVTMPowerMOSFET

文件:219.77 Kbytes Page:5 Pages

IXYS

IXYS Corporation

IXYS
IXTP180N085T

iscN-ChannelMOSFETTransistor

文件:295.26 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap

IXYS

IXYS Corporation

IXYS

HiPerFET-TMPowerMOSFETsISOPLUS247-TM(ElectricallyIsolatedBackSurface)

HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackSurface) SingleMOSFETDie Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXYS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=85V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap

IXYS

IXYS Corporation

IXYS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=85V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXTP180N085T产品属性

  • 类型

    描述

  • 型号

    IXTP180N085T

  • 功能描述

    MOSFET 180 Amps 85V 5.5 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-7-29 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Littelfuse/IXYS
24+
TO220
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
IXYS
1726+
TO-220
6528
只做进口原装正品现货,假一赔十!
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS/艾赛斯
2022+
TO-220
30000
进口原装现货供应,原装 假一罚十
IXYS
1922+
TO-220
274
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IXYS原装
25+23+
TO-220
22897
绝对原装正品全新进口深圳现货
IXYS/艾赛斯
23+
TO-220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IXYS
22+
TO2203
9000
原厂渠道,现货配单
IXYS
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IXYS
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十

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