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IXTP10N60P价格
参考价格：￥8.7318
型号：IXTP10N60P 品牌：Ixys 备注：这里有IXTP10N60P多少钱，2025年最近7天走势，今日出价，今日竞价，IXTP10N60P批发/采购报价，IXTP10N60P行情走势销售排行榜，IXTP10N60P报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTP10N60P | PolarHV Power MOSFET PolarHV™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density | IXYS 艾赛斯 |   | |
IXTP10N60P | N-Channel Enhancement Mode PolarHV™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density | IXYS 艾赛斯 | | |
IXTP10N60P | isc N-Channel MOSFET Transistor • FEATURES • Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Switch-Mode and Resonant- | ISC 无锡固电 | | |
isc N-Channel MOSFET Transistor • FEATURES • Drain Source Voltage- : VDSS= 600V(Min) • Static drain-source on-resistance : RDS(on) ≤ 0.74Ω@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Ideal for high-frequen | ISC 无锡固电 | | ||
PolarHV Power MOSFET PolarHV™ Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Features • Plastic overmolded tab for electrical isolation • International standard package • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect | IXYS 艾赛斯 | | ||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a | UTC 友顺 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.17857 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：2.33382 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
10A 600V N-channel Enhancement Mode Power MOSFET 文件：976.2 Kbytes Page：11 Pages | WXDH 东海半导体 | | ||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：330.13 Kbytes Page：8 Pages | UTC 友顺 | |
IXTP10N60P产品属性
- 类型
描述
- 型号
IXTP10N60P
- 功能描述
MOSFET 10.0 Amps 600 V 0.74 Ohm Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IXYS |
24+ |
TO-220铁头 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
IXYS |
17+ |
TO-220 |
6200 |
||||
IXYS |
24+ |
TO-220 |
8866 |
||||
IXYS/艾赛斯 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IXYS/艾赛斯 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IXYS |
21+ |
TO-220铁头 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS/LITTELFUSE |
2102 |
TO-220 |
15800 |
全新原装正品现货直销 |
|||
IXYS/艾赛斯 |
23+ |
TO-220Overmolde |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
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IXTP10N60P规格书下载地址
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2018-12-28
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