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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IXTM12N90 | MegaMOS FET MegaMOS™ FET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance ( | IXYS | ||
IXTM12N90 | isc N-Channel MOSFET Transistor 文件:302.97 Kbytes Page:2 Pages | ISC 无锡固电 | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION · Switch mode power supply · DC-DC converters · AC motor control | ISC 无锡固电 | |||
HiPerFET Power MOSFETs
| IXYS | |||
HIPERFET Power MOSFTETs HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications. | IXYS | |||
Fast Switching 文件:49.38 Kbytes Page:2 Pages | ISC 无锡固电 | |||
12A, 900V N-CHANNEL POWER MOSFET 文件:192.21 Kbytes Page:5 Pages | UTC 友顺 |
IXTM12N90产品属性
- 类型
描述
- 型号
IXTM12N90
- 功能描述
MOSFET 12 Amps 900V 0.9 Ohms Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
25+ |
TO-204 |
860000 |
明嘉莱只做原装正品现货 |
|||
IXYS/艾赛斯 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
9031 |
65 |
公司优势库存 热卖中! |
|||||
IXYS |
21+ |
CAN |
12588 |
原装正品,自己库存 假一罚十 |
|||
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||||
24+ |
TO-3 |
15 |
|||||
23+ |
原厂标准封装 |
8000 |
只做原装现货 |
||||
23+ |
原厂标准封装 |
7000 |
|||||
IXYS/艾赛斯 |
专业铁帽 |
TO-3 |
120 |
原装铁帽专营,代理渠道量大可订货 |
|||
IXYS |
05+ |
原厂原装 |
4283 |
只做全新原装真实现货供应 |
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IXTM12N90规格书下载地址
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2018-12-28
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