High Current MegaMOSFET

High Current MegaMOS™ FET N-Channel Enhancement Mode Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • Motor controls • DC choppers • Switched-mode power supplies Adva

N-Channel: Standard Power MOSFETs

High Current MegaMOSFET

High Current MegaMOS™ FET N-Channel Enhancement Mode Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • Motor controls • DC choppers • Switched-mode power supplies Adva

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=62A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) =35mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

HiPerFET Power MOSFETs Single MOSFET Die

HiPerFET Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Ap

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 62A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co