PolarHT Power MOSFET N-Channel Enhancement Mode

PolarHT™ Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

N-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ（max）@VGS= 10V ·Unclamped Inductive Switching APPLICATIONS ·Switching applications

N通道标准MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 27mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Ap

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low

HiPerFET Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swi

HiPerFET Power MOSFETs ISOPLUS247

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low d

PolarHT HiPerFET Power MOSFET

文件：100.86 Kbytes Page：5 Pages