PolarHTPowerMOSFETN-ChannelEnhancementMode

PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

N-ChannelPowerMOSFET

DESCRIPTION ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=50mΩ（max）@VGS=10V ·UnclampedInductiveSwitching APPLICATIONS ·Switchingapplications

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=27mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Low

HiPerFETPowerMOSFETs SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwi

HiPerFETPowerMOSFETsISOPLUS247

HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowd

PolarHTHiPerFETPowerMOSFET

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