LinearTM Power MOSFET w/ Extended FBSOA

Linear™ Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Features • International Standard Package • Designed for Linear Operation • Avalanche Rated • Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages • Easy to Mount • Space Savings • High

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Source Voltage- : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

N-Channel Enhancement Mode MOSFET

文件：231.04 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：238.98 Kbytes Page：4 Pages