High Voltage IGBT with Diode

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封装/外壳：TO-220-3 包装：管件 描述：IGBT 1200V 40A 190W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

GenX3 1200V IGBT

High Speed Low Vsat PT IGBTs 3-20 kHz Switching Features ● Optimized for Low Conduction and Switching Losses ● Square RBSOA ● International Standard Packages Applications ● Power Inverters ● UPS ● Motor Drives ● SMPS ● PFC Circuits ● Welding Machines ● Inductive Heating Advantages ●

High Voltage IGBT with Diode

文件：586.46 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 1200V 40A 190W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

General purpose inverters

文件：820.86 Kbytes Page：9 Pages

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：769.26 Kbytes Page：6 Pages

1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages

1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages