型号 功能描述 生产厂家&企业 LOGO 操作
IXGP15N120B

HiPerFAST IGBT

VCES = 1200 V IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Features • International standard packages JEDEC TO-220AB and TO-263AA • Low switching losses, low V(sat) • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers

IXYS

艾赛斯

IXGP15N120B

封装/外壳:TO-220-3 包装:管件 描述:IGBT 1200V 30A 150W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

High ruggedness, temperature stable behavior

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness,

DINTEK

Soft current turn-off waveforms

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior

DINTEK

Soft current turn-off waveforms

General Description Din-Tek IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·E

DINTEK

IGBT

General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件:1.36019 Mbytes Page:9 Pages

FOSHAN

蓝箭电子

IXGP15N120B产品属性

  • 类型

    描述

  • 型号

    IXGP15N120B

  • 功能描述

    IGBT 晶体管 30 Amps 1200V 3.2 Rds

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-14 18:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
1822+
TO-220
9852
只做原装正品假一赔十为客户做到零风险!!
IXYS/艾赛斯
22+
TO-220
25000
只做原装进口现货,专注配单
IXYS/艾赛斯
23+
TO-TO-220
87622
原厂授权一级代理,专业海外优势订货,价格优势、品种
IXYS
24+
TO-220
8866
IXYS
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IXYS/艾赛斯
17+
TO-220
31518
原装正品 可含税交易
JINGDAO/晶导微
23+
SMAF
69820
终端可以免费供样,支持BOM配单!
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
IXYS/艾赛斯
23+
TO-220
6000
原装正品,支持实单
IXYS
18+
TO-220
41200
原装正品,现货特价

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