IGBT

Features • International standard packages JEDEC TO-220AB and TO-263AA • Second generation HDMOS™ process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC chopper

封装/外壳：TO-220-3 包装：管件 描述：IGBT 1000V 24A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT

Features • International standard packages JEDEC TO-220AB and TO-263AA • Second generation HDMOS™ process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC chopper

IGBT - Combi Pack

Features • International standard packages JEDEC TO-220AB and TO-263AA • IGBT with antiparallel FRED in one package • Second generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (

IGBT - Combi Pack

Features • International standard packages JEDEC TO-220AB and TO-263AA • IGBT with antiparallel FRED in one package • Second generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (

封装/外壳：TO-220-3 包装：管件 描述：IGBT 1000V 24A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

文件：238.98 Kbytes Page：4 Pages