Low VCE(sat) IGBT, High speed IGBT

Low VCE(sat) IGBT High speed IGBT Features l International standard packages l 2nd generation HDMOSTM process l Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at

封装/外壳：TO-204AE 包装：管件 描述：POWER MOSFET TO-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Low VCE(sat) IGBT, High speed IGBT

Low VCE(sat) IGBT High speed IGBT Features l International standard packages l 2nd generation HDMOSTM process l Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at

封装/外壳：TO-204AE 包装：管件 描述：POWER MOSFET TO-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

Fast Switching

文件：95.42 Kbytes Page：2 Pages

N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15549 Mbytes Page：11 Pages

20A 600V N-channel enhanced field effect transistor

文件：833.85 Kbytes Page：6 Pages