Ultra-Low VCE(sat) IGBT

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封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 76A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Ultra-Low VCE(sat) IGBT

Ultra-Low VCE(sat) IGBT with Diode

Features • International standard package JEDEC TO-247 AD • IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED)

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 76A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Ultra-Low VCE(sat) IGBT with Diode

Lower Gate Charge Results in Simple Drive Requirements

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Compliant to RoHS Direc

SMPS MOSFET

Features and Benefits ● SuperFast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate Charge Results in Simple Drive Requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate voltage threshold offers improved noise immunity Applications

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