GenX3 1200V IGBTs

VCES = 1200V IC110 = 30A VCE(sat) ≤£ 3.5V tfi(typ) = 204ns High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching Features Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Applications Power Inverters UPS Motor Dri

GenX3 1200V IGBT

High speed Low Vsat PT IGBTs 3-20 kHz switching VCES = 1200V IC110 = 30A VCE(sat) ≤£ 3.5V Tfi(typ) = 204ns Features Optimized for low conduction and switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Applications P

GenX3 1200V IGBT

High speed PT IGBTs for 10-50kHz Switching VCES = 1200V IC100 = 24A VCE(sat) ≤ 4.2V tfi(typ) = 42ns Features Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode Avalanche Rated International Standard Package Applicat

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 300W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT 中频 IGBT

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 50A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT 1200V 50A TO247

PT 高频 IGBT

Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

1200V, 30A Trench IGBT

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1200V, 30A Trench IGBT

文件：614.76 Kbytes Page：9 Pages

Discrete IGBT (High-Speed V series) 1200V / 30A

文件：559.44 Kbytes Page：6 Pages