IGBT

VCES = 1200 V IC25 = 40 A VCE(sat) = 2.5 V tfi(typ) = 380 ns Features • International standard packages JEDEC TO-247 and TO-268 • High current handling capability • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo an

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 40A 150W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT IGBTs

GenX3 1200V IGBTs

Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching VCES= 1200V IC110 = 20A VCE(sat) ≤2.5V Features Optimized for Low Conduction Losses International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UP

High Voltage IGBT

VCES = 1200 V IC25 = 40 A VCE(sat) = 3.4 V tfi(typ) = 160 ns Features • High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD • Low switching losses,

PT 低频 IGBT

PT 中频 IGBT

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 40A 190W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Voltage IGBT with Diode

文件：495.03 Kbytes Page：5 Pages

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

General purpose inverters

文件：820.86 Kbytes Page：9 Pages

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：769.26 Kbytes Page：6 Pages

1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages

1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages