IGBT Lightspeed Series

VCES = 1200 V IC25 = 30 A VCE(sat) = 3.8 V tfi(typ) = 115 ns Features • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD • Low switching losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and ro

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 30A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT IGBTs

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode

Features • International standard packages : JEDEC TO-247AD & TO-268 • IGBT and anti-parallel FRED in one package • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (FRED) - soft recovery with low I RM

PT IGBTs

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 30A 150W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High ruggedness, temperature stable behavior

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness,

Soft current turn-off waveforms

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior

Soft current turn-off waveforms

General Description Din-Tek IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·E

IGBT

General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：1.36019 Mbytes Page：9 Pages