HiPerFASTTM IGBT

Features • Moderate frequency IGBT • New generation HDMOSTM process • International standard package JEDEC TO-247 • High peak current handling capability Applications • PFC circuit • AC motor speed control • DC servo and robot drives • Switch-mode and resonant-mode power supplies Advanta

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 24A 100W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

HiPerFAST TM IGBT

VDSS = 600 V ID25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Features • Moderate frequency IGBT • New generation HDMOSTM process • International standard package JEDEC TO-247 • High peak current handling capability and antiparallel diode in one package Applications

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 24A 100W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

12 Amps, 600/650 Volts N-CHANNEL MOSFET

The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p

12 Amps, 600/650 Volts N-CHANNEL MOSFET

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12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.58 Kbytes Page：11 Pages

12A 600V N-channel Enhancement Mode Power MOSFET

文件：898.09 Kbytes Page：11 Pages

12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.54 Kbytes Page：11 Pages