型号 功能描述 生产厂家 企业 LOGO 操作
IXGH12N100A

PT IGBTs

Littelfuse

力特

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode

Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Voltage rating guaranteed at high temperature (125C) Applicati

IXYS

艾赛斯

PT IGBTs

Littelfuse

力特

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

N-Channel Enhancement Mode MOSFET

文件:231.04 Kbytes Page:4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件:238.98 Kbytes Page:4 Pages

DACO

罡境电子

IXGH12N100A产品属性

  • 类型

    描述

  • 型号

    IXGH12N100A

  • 功能描述

    TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 24A I(C) | TO-247AD

更新时间:2025-11-2 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
24+
NA/
8675
原装现货,当天可交货,原型号开票
IXYS
23+
TO-247
7000
IXYS
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
IXYS/艾赛斯
22+
TO-247
6000
十年配单,只做原装
IXYS/艾赛斯
23+
TO-247
55300
原厂授权一级代理,专业海外优势订货,价格优势、品种
IXYS/艾赛斯
23+
TO-247
50000
全新原装正品现货,支持订货
IXYS
23+
TO-247
8000
只做原装现货
IXYS/艾赛斯
24+
TO-247
60000
全新原装现货
IXYS
25+
TO-247
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IXYS
18+
TO-247
41200
原装正品,现货特价

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