Low VCE(sat) IGBT with Diode High Speed IGBT with Diode

Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Voltage rating guaranteed at high temperature (125
C) Applicati

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1000V 24A 100W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode

Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Voltage rating guaranteed at high temperature (125
C) Applicati

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode

Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Voltage rating guaranteed at high temperature (125
C) Applicati

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

N-Channel Enhancement Mode MOSFET

文件：231.04 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：238.98 Kbytes Page：4 Pages