Low VCE(sat) IGBT, High speed IGBT

文件：56.25 Kbytes Page：2 Pages

Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs

Features • International standard package JEDEC TO-247 AD • IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode FRED) - soft r

Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs

Features • International standard package JEDEC TO-247 AD • IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode FRED) - soft r

Low VCE(sat) IGBT, High speed IGBT

文件：56.25 Kbytes Page：2 Pages

Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：330.13 Kbytes Page：8 Pages

N-Channel 6 50V (D-S) Power MOSFET

文件：2.17857 Mbytes Page：10 Pages

N-Channel 650V (D-S) Power MOSFET

文件：2.33382 Mbytes Page：11 Pages

10A 600V N-channel Enhancement Mode Power MOSFET

文件：976.2 Kbytes Page：11 Pages