IGBT Lightspeed Series

Features • International standard packages JEDEC TO-220AB and TO-263AA • Low switching losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mod

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 1000V 30A 150W TO263AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT IGBTs

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel Enhancement Mode MOSFET

文件：218.84 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：233.38 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：238.58 Kbytes Page：4 Pages