封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 300V 120A 250W TO263AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=120A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=25mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,D

GigaMOSPowerMOSFET

GigaMOS™PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •HighCurrentHandlingCapability •FastIntrinsicDiode •AvalancheRated •LowRDS(on) Advantages •EasytoMount •SpaceSavings •HighPowerDensity A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive ·ACMotorDrives ·BatteryCharges

300VPDPIGBT

文件：746.24 Kbytes Page：9 Pages

300V,120APDPIGBT

文件：885.31 Kbytes Page：7 Pages