位置：首页 > IC中文资料第10804页 > IXFX48N60P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFX48N60P | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mou | IXYS 艾赛斯 |   | |
IXFX48N60P | N通道HiPerFET MOSFET | Littelfuse 力特 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 48A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 48A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.135Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC | ISC 无锡固电 | | ||
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mou | IXYS 艾赛斯 | | ||
N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 140mΩ(Max)@VGS= 10V APPLICATIONS · Battery Chargers · DC Choppers · Power Factor Correction (PFC) · DC-DC Converters · High Speed Power Switching Application | ISC 无锡固电 | | ||
PolarHV HiPerFET Power MOSFET 文件：90.55 Kbytes Page：4 Pages | IXYS 艾赛斯 | |
IXFX48N60P产品属性
- 类型
描述
- 型号
IXFX48N60P
- 功能描述
MOSFET 600V 48A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
TO-3P |
45000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
61000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS/艾赛斯 |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IXYS |
18+ |
TO-247 |
85600 |
保证进口原装可开17%增值税发票 |
|||
IXYS |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IXYS |
24+ |
PLUS247 |
420 |
||||
IXYS |
25+ |
PLUS247 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IXYS/艾赛斯 |
23+ |
TO-3P(PLUS247) |
89630 |
当天发货全新原装现货 |
IXFX48N60P规格书下载地址
IXFX48N60P参数引脚图相关
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IXFX48N60P数据表相关新闻
IXFN300N10P
进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXOLAR?高效25％SolarMD模块SM111K04L
IXYS / Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电
2019-9-17IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS / Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17
DdatasheetPDF页码索引
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