HiPerFET Power MOSFETs

Single MOSFET Die Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 48A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

HiPerFET Power MOSFETs

Single MOSFET Die Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications

HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swit