HiPerFET Power MOSFETs

HiPerFET Power MOSFETs Single MOSFET Die Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrin

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=34A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

N通道HiPerFET

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs Single MOSFET Die Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrin

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 34A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Single MOSFET Die Avalanche Rated

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Backside) Single MOSFET Die Avalanche Rated Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

HiPerFETTM Power MOSFETs Single DieMOSFET

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