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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFT80N20Q | HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fastin | IXYS IXYS Integrated Circuits Division |  |   |
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fastin | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=28mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=30mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •MoldingepoxiesmeetUL94V-0flammabilityclassification •LowRDS(on)HDMOSTMprocess •UnclampedInductiveSwitching(UIS)rated •Fastintrinsicrectifier | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fastin | IXYS IXYS Integrated Circuits Division | | |
IXFT80N20Q产品属性
- 类型
描述
- 型号
IXFT80N20Q
- 功能描述
MOSFET 80 Amps 200V 0.03 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
23+ |
TO268HV |
6000 |
||||
IXYS |
21+ |
TO2683 D3Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
|||
IXYS |
23+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原装正品，支持实单 |
|||
IXYS |
1844+ |
TO-268 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IXYS |
22+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
IXYS/艾赛斯 |
24+ |
TO-268 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
IXYS |
23+ |
SMD |
67649 |
原装正品实单可谈 库存现货 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-268 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
21+ |
TO-268 |
16500 |
进口原装正品现货 |
IXFT80N20Q芯片相关品牌
IXFT80N20Q规格书下载地址
IXFT80N20Q参数引脚图相关
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IXFT80N20Q数据表相关新闻
IXFN300N10P
进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXOLAR?高效25％SolarMD模块SM111K04L
IXYS/Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电
2019-9-17IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS/Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17
DdatasheetPDF页码索引
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