型号 功能描述 生产厂家 企业 LOGO 操作
IXFT80N08

N-Channel Enhancement Mode Avalanche Rated, High dv/dt

文件:93.81 Kbytes Page:2 Pages

IXYS

艾赛斯

IXFT80N08

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

Littelfuse

力特

HiPerFETTM Power MOSFETs

Features • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) • Molding epoxies meet UL94V-0 flammability classification Advantages • Easy to mount • Space savings • High power density

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

Littelfuse

力特

N-CHANNEL 80V (D-S) MOSFET

DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology

UTC

友顺

isc N-Channel MOSFET Transistor

文件:279.26 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件:942.08 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

N-Channel MOSFET uses advanced SGT technology

文件:2.24856 Mbytes Page:4 Pages

DOINGTER

杜因特

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件:930.96 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

IXFT80N08产品属性

  • 类型

    描述

  • 型号

    IXFT80N08

  • 功能描述

    MOSFET 80 Amps 80V 0.009 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-19 14:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
IXYS/艾赛斯
23+
TO-268D3PAK
42736
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
IXYS
25+
TO-268
326
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