HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • Low gate charge • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and curr

HiPerFET™ Power MOSFETs Q-Class

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

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ACTIVE / SYNCHRONOUS RECTIFIER

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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