HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, Low Qg ,High dv/dt Features IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

26A, 500V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC26N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

HiPerFET MOSFETs ISOPLUS220

Electrically Isolated Back Surface N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
Low drain to tab capacitance(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

PolarHV HiPerFET Power MOSFET ISOPLUS 220

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance( Applications DC-DC converters

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-