封装/外壳：TO-247-3 包装：盒 描述：MOSFET N-CH 200V ISOPLUS247 分立半导体产品 晶体管 - FET，MOSFET - 单个

MOSFET N-CH 200V ISOPLUS247

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??

Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??

Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

HEXFET짰Power MOSFET

Applications • High frequency DC-DC converters • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

N-Channel MOSFET Transistor

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