位置：首页 > IC中文资料第6618页 > IXFR58N20Q
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFR58N20Q | HiPerFETPowerMOSFETsISOPLUS247Q-Class HiPerFET™PowerMOSFETsISOPLUS247™Q-Class(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface | IXYS IXYS Integrated Circuits Division |  |   |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRatedHighdv/dt,LowQg Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -easiertodrive -fasterswitching •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Moldingepoxi | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | | |
IXFR58N20Q产品属性
- 类型
描述
- 型号
IXFR58N20Q
- 功能描述
MOSFET 50 Amps 200V 0.04 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
21+ |
ISOPLUS247? |
13880 |
公司只售原装,支持实单 |
|||
VBSEMI |
19+ |
ISOPLUS247 |
29600 |
绝对原装现货,价格优势! |
|||
IXYS/艾赛斯 |
23+ |
ISOPLUS247 |
6000 |
原装正品，支持实单 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-247-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
|||
ir |
2023+ |
TO-247 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
IXYS/艾赛斯 |
22+ |
ISOPLUS247 |
25000 |
只做原装进口现货,专注配单 |
|||
IXYS |
23+ |
ISOPLUS247 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IXYS/艾赛斯 |
23+ |
ISOPLUS247 |
10000 |
公司只做原装正品 |
IXFR58N20Q芯片相关品牌
IXFR58N20Q规格书下载地址
IXFR58N20Q参数引脚图相关
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IXFR58N20Q数据表相关新闻
IXFN300N10P
进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS/Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17IXFK40N90P
IXFK40N90P，全新原装当天发货或门市自取0755-82732291.
2019-3-14
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