封装/外壳：TO-247-3 包装：盒 描述：MOSFET N-CH 900V ISOPLUS247 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 460mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.42Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

HiPerFET Power MOSFETs Q-CLASS

HiPerFET Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt, Low trr Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting control

Polar Power MOSFET HiPerFET

文件：128.389 Kbytes Page：4 Pages