HiPerFET Power MOSFETs ISOPLUS247

Single MOSFET Die Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 70V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N通道HiPerFET MOSFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=180A@ TC=25℃ · Drain Source Voltage -VDSS=70V(Min) · Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

HiPerFET Power MOSFETs

HiperFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Avalanche Rated • Low Intrinsic Gate Resistance • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Advantages • High Power Densi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 180A@ TC=25℃ ·Drain Source Voltage : VDSS= 70V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated

Power MOSFETs

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