封装/外壳：TO-247-3 包装：管件 描述：MOSFET N-CH ISOPLUS247 分立半导体产品 晶体管 - FET，MOSFET - 单个

MOSFET Polar HiperFET Power MOSFET

PolarHV HiPerFET Power MOSFET ISOPLUS220

N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

PolarHV Power MOSFET

N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features Fast Recovery diode Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings

PolarHV Power MOSFET

N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features Fast Recovery diode Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings