HiPerFET Power MOSFETs ISOPLUS247

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Backside) Single MOSFET Die Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 105A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V APPLICATIONS · Switching · Converters

PolarHT??HiPerFET Power MOSFET

Features ● International standard packages ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS(on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier App

PolarHT??HiPerFET Power MOSFET

Features ● International standard packages ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

N-Channel Enhancement Mode Power Mosfet

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