Polar Power MOSFET HiperFET

Polar™ Power MOSFET HiperFET™ N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

N通道HiPerFET

Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Plastic overmolded tab for electrical isolation • International standard package • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy t

N通道HiPerFET

12 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

Fast Switching

• FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) • Fast Switching •APPLICATIONS •Switch mode power supply.

Power MOSFETs

FEATURES • Low Figure-of-Merit Ron x Qg • 100 Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC

12A, 500V N-CHANNEL POWER MOSFET

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N-Channel 650 V (D-S) MOSFET

文件：1.039369 Mbytes Page：8 Pages