HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features International standard packages Molding epoxies meet UL 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOS™ process
Unclamped Inductive Switching (UIS

HiPerFET Power MOSFETs

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N通道HiPerFET

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg , High dv/dt Features •IXYS advanced low Qg process •Low gate charge and capacitances - easier to drive -faster switching •Unclamped Inductive Switching (UIS) rated •Low RDS (on) •Fast intrinsic diode •International st

HiPerFET Power MOSFETs

Buck & Boost Configurations for PFC & Motor Control Circuits Features Popular Buck & Boost circuit topologies
International standard package miniBLOC SOT-227B
Aluminium nitride isolation - high power dissipation
Isolation voltage 3000 V~ Low RDS(on) HDMOS™ p

HiPerFET Power MOSFETs

Buck & Boost Configurations for PFC & Motor Control Circuits Features Popular Buck & Boost circuit topologies
International standard package miniBLOC SOT-227B
Aluminium nitride isolation - high power dissipation
Isolation voltage 3000 V~ Low RDS(on) HDMOS™ p

HiPerFET Power MOSFETs Q-Class

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Boost and Buck Configurations

Boost and Buck Configurations

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 44A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature

HiPerFET Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrins

PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = 500 V ID25 = 44 A RDS(on) ≤140 mΩ trr ≤200 ns Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect

isc N-Channel MOSFET Transistor

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