型号 功能描述 生产厂家 企业 LOGO 操作
IXFM75N10

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

IXFM75N10

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

IXFM75N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- VDSS= 100V(Min) ·Static Drain-Source On-Resistance - RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IXFM75N10

N通道HiPerFET

Littelfuse

力特

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N10 uses advanced trench technology and design to provide excellent RDS(ON) with

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N10E uses advanced trench technology and design to provide excellent RDS(ON) with

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N10Q uses advanced trench technology and design to provide excellent RDS(ON) with

ADV

爱德微

N-Channel Power MOSFET

文件:412.76 Kbytes Page:8 Pages

NELLSEMI

尼尔半导体

Fast Switching Speed

文件:58.98 Kbytes Page:2 Pages

ISC

无锡固电

IXFM75N10产品属性

  • 类型

    描述

  • 型号

    IXFM75N10

  • 功能描述

    MOSFET 100V 75A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-21 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
22+
SOT227
8000
原装正品支持实单
IXYS/艾赛斯
23+
MODULE
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IXYS/艾赛斯
2023+
MODULE
138
主打螺丝模块系列
IXYS/艾赛斯
专业铁帽
TO-3
100
原装铁帽专营,代理渠道量大可订货
IXYS
22+
SOT2274 miniBLOC
9000
原厂渠道,现货配单
IXYS
24+
89
IXYS
20+
TO3
35830
原装优势主营型号-可开原型号增税票
IXYS(艾赛斯)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
IXFN
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
IXYS
21+
SOT-227B
1000
主打产品价格优惠.全新原装正品

IXFM75N10数据表相关新闻