HiPerFET Power MOSFETs

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

Simple Drive Requirements

文件：68.14 Kbytes Page：2 Pages

10 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：194.61 Kbytes Page：6 Pages

10A, 900V N-CHANNEL POWER MOSFET

文件：203.06 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：421.86 Kbytes Page：2 Pages

900V,10A N-Channel MOSFET

文件：297.64 Kbytes Page：5 Pages