isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

HiPerFET Power MOSFETs Q-Class

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HiPerFET Power MOSFETs Q2-Class

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Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology

Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCEsat - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCEsat • Designed f

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

N-Type Fixed Attenuator

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Soft Switching Series

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Reverse Conducting IGBT with monolithic body diode

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