位置：首页 > IC中文资料第1846页 > IXFK20N80Q
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFK20N80Q | HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E | IXYS IXYS Integrated Circuits Division |  |   |
IXFK20N80Q | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.52Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E | IXYS IXYS Integrated Circuits Division | | | |
PolarHVHiPerFETPowerMOSFET 文件：139.47 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | |
IXFK20N80Q产品属性
- 类型
描述
- 型号
IXFK20N80Q
- 功能描述
MOSFET 20 Amps 800V 0.42 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXSY |
20+ |
TO-264 |
36900 |
原装优势主营型号-可开原型号增税票 |
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Ixs |
23+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
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IXSY |
23+ |
TO-264 |
6000 |
原装正品，支持实单 |
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IXYS |
23+ |
TO-3PL |
63847 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IXYS/艾赛斯 |
23+ |
NA/ |
17138 |
原装现货,当天可交货,原型号开票 |
|||
IXYS/艾赛斯 |
24+ |
TO264 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
IXYS/艾赛斯 |
2022 |
TO264 |
80000 |
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|||
IXYS |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
|||
IXYS |
18+ |
TO-3PL |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
IXYS |
23+ |
管3PL |
18000 |
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IXFK20N80Q规格书下载地址
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IXFK20N80Q数据表相关新闻
IXFH80N65X2全新原装正品，特价供应，假一罚十！！
IXFH80N65X2全新原装正品，特价供应，假一罚十！！
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2019-3-14
DdatasheetPDF页码索引
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