位置：首页 > IC中文资料第5667页 > IXFK105N07
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFK105N07 | HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching | IXYS 艾赛斯 |   | |
IXFK105N07 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 105A@ TC=25℃ ·Drain Source Voltage- : VDSS= 70V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 | | |
IXFK105N07 | HiPerFET™ Power MOSFETs | LITTELFUSE 力特 | |
IXFK105N07产品属性
- 类型
描述
- 型号
IXFK105N07
- 制造商
IXYS
- 制造商全称
IXYS Corporation
- 功能描述
HiPerFET Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
22+ |
TO2643 TO264AA |
9000 |
原厂渠道,现货配单 |
|||
IXY |
06+ |
TO-3PL |
500 |
原装 |
|||
24+ |
SMD |
5500 |
一级代理原装现货假一罚十 |
||||
IXYS |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
|||
IXYS |
24+ |
TO-264AA |
723 |
||||
IXYS |
23+ |
TO-3PL |
64198 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IXYS |
23+24 |
TO-3PL |
9860 |
原厂原包装。终端BOM表可配单。可开13%增值税 |
|||
IXYS |
22+ |
TO-264 |
20000 |
公司只做原装 品质保障 |
|||
IXYS(艾赛斯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
原厂 |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
IXFK105N07规格书下载地址
IXFK105N07参数引脚图相关
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IXFK105N07数据表相关新闻
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2019-3-14
DdatasheetPDF页码索引
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