HiPerFETTM Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switch

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

HiPerFET Power MOSFETs Q-Class

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900V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC7N90 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse i

7A, 900V N-CHANNEL POWER MOSFET

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Fast Switching Speed

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N-Channel Power MOSFET

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isc N-Channel Mosfet Transistor

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