HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

N-Channel Power MOSFET

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6.2A, 900V N-CHANNEL POWER MOSFET

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900V N-Channel MOSFET

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N-CHANNEL POWER MOSFET

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