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IXFH6N120P价格
参考价格：￥28.2328
型号：IXFH6N120P 品牌：Ixys 备注：这里有IXFH6N120P多少钱，2024年最近7天走势，今日出价，今日竞价，IXFH6N120P批发/采购报价，IXFH6N120P行情走势销售排行榜，IXFH6N120P报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFH6N120P | PolarHiPerFETPowerMOSFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant | IXYS IXYS Integrated Circuits Division |  |   |
IXFH6N120P | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IXFH6N120P | PowerMOSFET 文件：185.65 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | |
HighVoltageHiPerFETPowerMOSFET HighVoltageHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandto | IXYS IXYS Integrated Circuits Division | | | |
1200VN-ChannelSiliconCarbidePowerMOSFET Features ⚫Highblockingvoltage ⚫Highspeedswitchingwithlowcapacitance ⚫Highoperatingjunctiontemperaturecapability ⚫Veryfastandrobustintrinsicbodydiode Applications ⚫Solarinverters ⚫UPS ⚫HighvoltageDC/DCconverters ⚫Switchmodepowersupplies | DINTEK DinTek Semiconductor Co,.Ltd |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PolarHiPerFETPowerMOSFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant | IXYS IXYS Integrated Circuits Division | | | |
PowerMOSFET 文件：185.65 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | |
IXFH6N120P产品属性
- 类型
描述
- 型号
IXFH6N120P
- 功能描述
MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
NA/ |
400 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IXYS |
2020+ |
TO-3P |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IXYS/艾赛斯 |
24+ |
TO3P |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
IXYS |
22+23+ |
TO-247 |
15434 |
绝对原装正品全新进口深圳现货 |
|||
IXYS/艾赛斯 |
TO-247 |
265209 |
假一罚十原包原标签常备现货! |
||||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-247-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
23+ |
TO-247 |
2200 |
有挂有货,原装正品,代理处分货 |
|||
IXYS/艾赛斯 |
2023+ |
TO-247 |
8635 |
一级代理优势现货,全新正品直营店 |
|||
IXYS |
21+ |
TO-247 |
16500 |
进口原装正品现货 |
|||
IXYS |
23+ |
SMD |
67054 |
原装正品实单可谈 库存现货 |
IXFH6N120P芯片相关品牌
IXFH6N120P规格书下载地址
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DdatasheetPDF页码索引
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