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IXFH6N120价格
参考价格：￥28.2328
型号：IXFH6N120P 品牌：Ixys 备注：这里有IXFH6N120多少钱，2025年最近7天走势，今日出价，今日竞价，IXFH6N120批发/采购报价，IXFH6N120行情走势销售排行榜，IXFH6N120报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFH6N120 | High Voltage HiPerFET Power MOSFET High Voltage HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to | IXYS 艾赛斯 |   | |
IXFH6N120 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | |
Polar HiPerFET Power MOSFET Polar™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International Standard Packages ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Diode ● Low QG ● Low RDS(on) ● Low Drain-to-Tab Capacitance ● Low Package Inductance Advant | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D | ISC 无锡固电 | | ||
Power MOSFET 文件：185.65 Kbytes Page：6 Pages | IXYS 艾赛斯 | | ||
1200V N-Channel Silicon Carbide Power MOSFET Features ⚫ High blocking voltage ⚫ High speed switching with low capacitance ⚫ High operating junction temperature capability ⚫ Very fast and robust intrinsic body diode Applications ⚫ Solar inverters ⚫ UPS ⚫ High voltage DC/DC converters ⚫ Switch mode power supplies | DINTEK | | ||
Polar HiPerFET Power MOSFET Polar™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International Standard Packages ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Diode ● Low QG ● Low RDS(on) ● Low Drain-to-Tab Capacitance ● Low Package Inductance Advant | IXYS 艾赛斯 | | ||
THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs 文件：697.32 Kbytes Page：1 Pages | THINKISEMI 思祁半导体 | | ||
THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs 文件：697.32 Kbytes Page：1 Pages | THINKISEMI 思祁半导体 | | ||
Power MOSFET 文件：185.65 Kbytes Page：6 Pages | IXYS 艾赛斯 | |
IXFH6N120产品属性
- 类型
描述
- 型号
IXFH6N120
- 功能描述
MOSFET 6 Amps 1200V 2.4 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
400 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IXYS |
24+ |
TO-3P |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IXYS/艾赛斯 |
2023+ |
TO-247 |
8635 |
一级代理优势现货,全新正品直营店 |
|||
IXYS |
25+23+ |
TO-247 |
15434 |
绝对原装正品全新进口深圳现货 |
|||
IXYS/艾赛斯 |
25+ |
TO-247 |
880000 |
明嘉莱只做原装正品现货 |
|||
IXYS |
23+ |
TO-247 |
2200 |
有挂有货,原装正品,代理处分货 |
|||
IXYS |
24+ |
TO-3P |
5000 |
全新原装正品,现货销售 |
|||
IXYS |
23+ |
TO-3P |
7000 |
||||
IXYS/艾赛斯 |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
|||
IXYS/艾赛斯 |
2447 |
TO-247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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IXFH6N120规格书下载地址
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