HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.8Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N通道HiPerFET MOSFET

Polar Power MOSFET HiPerFET

文件：161.13 Kbytes Page：4 Pages

1000V,4A N-Channel MOSFET

文件：294.75 Kbytes Page：5 Pages

isc N-Channel MOSFET Transistor

文件：421.82 Kbytes Page：2 Pages

1000V,4A N-Channel MOSFET

文件：344.49 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：257.79 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：295.63 Kbytes Page：2 Pages