HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Features • IXYS advanced low Qg process • International standard packages • Low gate charge and capacitance - easier to drive - faster switching • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 58A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 58A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.