HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

HiPerFET Power MOSFETs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

PolarHV™ Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features • Fast Recovery diode • Unclamped Inductive Switching (UIS) rated • International standard packages • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

HiPerFETTM Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features ● Low gate charge ● International standard packages ● Epoxy meet UL 94 V-0, flammability classification ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Avalanche energy and current rated ● Fa

N通道HiPerFET

N通道HiPerFET

SMPS MOSFET

Features and Benefits • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Applica

Power MOSFET

FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza

Power MOSFET

Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.25Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET

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