位置：首页 > IC中文资料第382页 > IXFH22N55
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFH22N55 | HiPerFET Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Features • International standard packages JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance ( | IXYS 艾赛斯 |   | |
IXFH22N55 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | |
IXFH22N55 | N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) | Littelfuse 力特 | |
IXFH22N55产品属性
- 类型
描述
- 型号
IXFH22N55
- 功能描述
MOSFET 550V 22A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
TO-3P |
89630 |
当天发货全新原装现货 |
|||
IXYS/艾赛斯 |
23+ |
TO-247 |
59580 |
原装正品 华强现货 |
|||
IXYS |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS |
24+ |
TO-3P |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
I |
25+ |
TO-247AD |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IXYS |
23+ |
TO-3P |
5000 |
专做原装正品,假一罚百! |
|||
IXYS |
17+ |
TO-3P |
6200 |
||||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS艾赛斯 |
1626+ |
TO-247 |
1652 |
代理品牌 |
|||
IXYS |
24+ |
TO-247 |
8866 |
IXFH22N55规格书下载地址
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DdatasheetPDF页码索引
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