Preliminary Technical Information

VDSS = 500V ID25 = 20A RDS(on) ≤ 300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Moun

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

Power MOSFET

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N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching sp

Low leakage current

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20A, 500V N-CHANNEL POWER MOSFET

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20A 500V N-channel Enhancement Mode Power MOSFET

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20A 500V N-channel enhanced field effect transistor

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